PHX6ND50E Specs and Replacement
Type Designator: PHX6ND50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT186A
PHX6ND50E substitution
- MOSFET ⓘ Cross-Reference Search
PHX6ND50E datasheet
phx6nd50e 2.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 3.1 A High thermal cycling performance g Isolated package RDS(ON) 1.5 Fast reverse recovery diode trr = 180 ns... See More ⇒
phx6n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 A g Isolated package RDS(ON) 1.8 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh... See More ⇒
phx6na60e.pdf
Philips Semiconductors Objective specification PowerMOS transistors PHX6NA60E Low capacitance Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Low feedback capacitance Stable off-state characteristics ID = 3.9 A g High thermal cycling performance Low thermal resistance RDS(ON) 1.2 ... See More ⇒
Detailed specifications: PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E, AO3400, PHX7N60E, PHX8N50E, PHX8ND50E, PMBF4391, PMBF4392, PMBF4393, PMBF4416, PMBF4416A
Keywords - PHX6ND50E MOSFET specs
PHX6ND50E cross reference
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PHX6ND50E replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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