RQ3E180GN Todos los transistores

 

RQ3E180GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RQ3E180GN

Código: E180GN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 22.4 nC

Tiempo de elevación (tr): 6.9 nS

Conductancia de drenaje-sustrato (Cd): 380 pF

Resistencia drenaje-fuente RDS(on): 0.0043 Ohm

Empaquetado / Estuche: HSMT8

Búsqueda de reemplazo de MOSFET RQ3E180GN

 

RQ3E180GN Datasheet (PDF)

1.1. rq3e180gn.pdf Size:474K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E180GN Nch 30V 18A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 4.3mW RDS(on) at 4.5V (Max.) 5.5mW ID 18A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D

3.1. rq3e180aj.pdf Size:2698K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E180AJ Datasheet   Nch 30V 18A Middle Power MOSFET    lOutline l             HSMT8 VDSS 30V   RDS(on)(Max.) 4.5mΩ     ID ±18A     PD 2W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant lPackaging specifications l

 5.1. rq3e160ad.pdf Size:2739K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E160AD Datasheet   Nch 30V 16A Middle Power MOSFET    lOutline l             HSMT8 VDSS 30V   RDS(on)(Max.) 4.5mΩ     ID ±16A     PD 2W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package. 4) Pb-free lead plating ; RoHS co

5.2. rq3e100bn.pdf Size:2665K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E100BN Datasheet   Nch 30V 10A Middle Power MOSFET    lOutline l             HSMT8 VDSS 30V   RDS(on)(Max.) 10.4mΩ     ID ±10A     PD 2W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackag

 5.3. rq3e100gn.pdf Size:473K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E100GN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 11.7mW RDS(on) at 4.5V (Max.) 15.7mW ID 10A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY

5.4. rq3e120gn.pdf Size:474K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E120GN Nch 30V 12A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.8mW ID 12A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY

 5.5. rq3e150mn.pdf Size:475K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI

5.6. rq3e150bn.pdf Size:2687K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E150BN Datasheet   Nch 30V 15A Middle Power MOSFET    lOutline l             HSMT8 VDSS 30V   RDS(on)(Max.) 5.3mΩ     ID ±15A     PD 2W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi

5.7. rq3e100mn.pdf Size:465K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E100MN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 12.3mW RDS(on) at 4.5V (Max.) 16.8mW ID 10A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTEC

5.8. rq3e150gn.pdf Size:473K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E150GN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 6.1mW RDS(on) at 4.5V (Max.) 8.1mW ID 15A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 BODY DIODE 4) Halogen F

5.9. rq3e120at.pdf Size:2504K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E120AT Datasheet   Pch -30V -12A Middle Power MOSFET    lOutline l             HSMT8 VDSS -30V   RDS(on)(Max.) 8.0mΩ     ID ±12A     PD 2W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen F

5.10. rq3e120bn.pdf Size:2664K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E120BN Datasheet   Nch 30V 12A Middle Power MOSFET    lOutline l             HSMT8 VDSS 30V   RDS(on)(Max.) 9.3mΩ     ID ±12A     PD 2W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi

5.11. rq3e130mn.pdf Size:476K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI

5.12. rq3e130bn.pdf Size:2816K _update_mosfet

RQ3E180GN
RQ3E180GN

RQ3E130BN Datasheet   Nch 30V 13A Middle Power MOSFET    lOutline l             HSMT8 VDSS 30V   RDS(on)(Max.) 6.0mΩ     ID ±13A     PD 2W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi

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