PHX8N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHX8N50E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 4.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: SOT186A

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PHX8N50E datasheet

 ..1. Size:74K  philips
 phx8n50e.pdf pdf_icon

PHX8N50E

Philips Semiconductors Product specification PowerMOS transistors PHX8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 4.2 A g Isolated package RDS(ON) 0.85 s GENERAL DESCRIPTION PINNING SOT186A N-channel, en

 9.1. Size:61K  philips
 phx8nd50e 2.pdf pdf_icon

PHX8N50E

Philips Semiconductors Product specification PowerMOS transistors PHX8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 4.2 A High thermal cycling performance g Isolated package RDS(ON) 0.85 Fast reverse recovery diode trr = 180 n

 9.2. Size:90K  philips
 phx8nq11t.pdf pdf_icon

PHX8N50E

PHX8NQ11T N-channel TrenchMOS standard level FET Rev. 01 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Isolated package. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 Qui

Otros transistores... PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E, PHX6ND50E, PHX7N60E, IRF3710, PHX8ND50E, PMBF4391, PMBF4392, PMBF4393, PMBF4416, PMBF4416A, PMBF5484, PMBF5485