PHX8N50E Datasheet and Replacement

Philips Semiconductors Product specification PowerMOS transistors PHX8N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 4.2 Ag Isolated packageRDS(ON) 0.85 sGENERAL DESCRIPTION PINNING SOT186AN-channel, en

Philips Semiconductors Product specification PowerMOS transistors PHX8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 4.2 A High thermal cycling performanceg Isolated package RDS(ON) 0.85 Fast reverse recovery diodetrr = 180 n

PHX8NQ11TN-channel TrenchMOS standard level FETRev. 01 14 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a fully isolated encapsulatedplastic package using TrenchMOS technology.1.2 Features Low on-state resistance Isolated package.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Qui