PHX8N50E Specs and Replacement

Type Designator: PHX8N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: SOT186A

PHX8N50E substitution

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PHX8N50E datasheet

 ..1. Size:74K  philips
 phx8n50e.pdf pdf_icon

PHX8N50E

Philips Semiconductors Product specification PowerMOS transistors PHX8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 4.2 A g Isolated package RDS(ON) 0.85 s GENERAL DESCRIPTION PINNING SOT186A N-channel, en... See More ⇒

 9.1. Size:61K  philips
 phx8nd50e 2.pdf pdf_icon

PHX8N50E

Philips Semiconductors Product specification PowerMOS transistors PHX8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 4.2 A High thermal cycling performance g Isolated package RDS(ON) 0.85 Fast reverse recovery diode trr = 180 n... See More ⇒

 9.2. Size:90K  philips
 phx8nq11t.pdf pdf_icon

PHX8N50E

PHX8NQ11T N-channel TrenchMOS standard level FET Rev. 01 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Isolated package. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 Qui... See More ⇒

Detailed specifications: PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E, PHX6ND50E, PHX7N60E, IRF3710, PHX8ND50E, PMBF4391, PMBF4392, PMBF4393, PMBF4416, PMBF4416A, PMBF5484, PMBF5485

Keywords - PHX8N50E MOSFET specs

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