RS1E280BN Todos los transistores

 

RS1E280BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RS1E280BN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 94 nC

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 600 pF

Resistencia drenaje-fuente RDS(on): 0.0023 Ohm

Empaquetado / Estuche: HSOP8

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RS1E280BN Datasheet (PDF)

1.1. rs1e280bn.pdf Size:2699K _update_mosfet

RS1E280BN
RS1E280BN

RS1E280BN Datasheet   Nch 30V 28A Middle Power MOSFET    lOutline l             HSOP8 VDSS 30V   RDS(on)(Max.) 2.3mΩ     ID ±28A     PD 3W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free

3.1. rs1e280gn.pdf Size:476K _update_mosfet

RS1E280BN
RS1E280BN

RS1E280GN Nch 30V 28A Power MOSFET Datasheet lOutline VDSS 30V HSOP8 RDS(on) at 10V (Max.) 2.6mW RDS(on) at 4.5V (Max.) 3.3mW ID 28A PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D

 5.1. rs1e240bn.pdf Size:2732K _update_mosfet

RS1E280BN
RS1E280BN

RS1E240BN Datasheet   Nch 30V 24A Middle Power MOSFET    lOutline l             HSOP8 VDSS 30V   RDS(on)(Max.) 3.2mΩ     ID ±24A     PD 3W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free

5.2. rs1e240gn.pdf Size:474K _update_mosfet

RS1E280BN
RS1E280BN

RS1E240GN Nch 30V 24A Power MOSFET Datasheet lOutline VDSS 30V HSOP8 RDS(on) at 10V (Max.) 3.3mW RDS(on) at 4.5V (Max.) 4.4mW ID 24A PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D

 5.3. rs1e200ah.pdf Size:1169K _update_mosfet

RS1E280BN
RS1E280BN

RS1E200AH Datasheet   Nch 30V 20A Power MOSFET    lOutline l             HSOP8 VDSS 30V   RDS(on)(Max.) 5.2mΩ     ID ±20A     PD 3W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. 5) 100% Rg and

5.4. rs1e200gn.pdf Size:458K _update_mosfet

RS1E280BN
RS1E280BN

RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V HSOP8 RDS(on) at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D

 5.5. rs1e200bn.pdf Size:2700K _update_mosfet

RS1E280BN
RS1E280BN

RS1E200BN Datasheet   Nch 30V 20A Middle Power MOSFET    lOutline l             HSOP8 VDSS 30V   RDS(on)(Max.) 3.9mΩ     ID ±20A     PD 3.0W                         lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Fr

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