All MOSFET. RS1E280BN Datasheet

 

RS1E280BN Datasheet and Replacement


   Type Designator: RS1E280BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: HSOP8
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RS1E280BN Datasheet (PDF)

 ..1. Size:2699K  rohm
 rs1e280bn.pdf pdf_icon

RS1E280BN

RS1E280BNDatasheetNch 30V 28A Middle Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 2.3m ID 28A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free

 7.1. Size:476K  rohm
 rs1e280gn.pdf pdf_icon

RS1E280BN

RS1E280GN Nch 30V 28A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)2.6mWRDS(on) at 4.5V (Max.)3.3mWID28APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D

 9.1. Size:474K  rohm
 rs1e240gn.pdf pdf_icon

RS1E280BN

RS1E240GN Nch 30V 24A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)3.3mWRDS(on) at 4.5V (Max.)4.4mWID24APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D

 9.2. Size:2732K  rohm
 rs1e240bn.pdf pdf_icon

RS1E280BN

RS1E240BNDatasheetNch 30V 24A Middle Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 3.2m ID 24A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free

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Keywords - RS1E280BN MOSFET datasheet

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