RSD050N10FRA Todos los transistores

 

RSD050N10FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSD050N10FRA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 15 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 14 nC

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: SC-63

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RSD050N10FRA Datasheet (PDF)

1.1. rsd050n10fra.pdf Size:830K _update_mosfet

RSD050N10FRA
RSD050N10FRA

AEC-Q101 Qualified 4V Drive Nch MOSFET RSD050N10FRA Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. 9 Applications Switching Packaging specifications 

1.2. rsd050n10.pdf Size:505K _rohm

RSD050N10FRA
RSD050N10FRA

4V Drive Nch MOSFET RSD050N10 ?Structure ?Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) ?Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. 9 ?Applications Switching ?Packaging specifications ?Inner circuit Package CPT3 ?1 Type

 3.1. rsd050n06tl.pdf Size:1225K _update_mosfet

RSD050N10FRA
RSD050N10FRA

Data Sheet 4V Drive Nch MOSFET RSD050N06 Structure  Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. Applications Switching Packaging specifications  Inner circ

3.2. rsd050n06fra.pdf Size:1067K _update_mosfet

RSD050N10FRA
RSD050N10FRA

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD050N06FRA Structure  Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. Applications Switching Packaging specif

 3.3. rsd050n06.pdf Size:1224K _rohm

RSD050N10FRA
RSD050N10FRA

Data Sheet 4V Drive Nch MOSFET RSD050N06 ?Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) ?Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ?Applications Switching ?Packaging specifications ? Inner circuit Package CP

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