RSD200N10TL Todos los transistores

 

RSD200N10TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSD200N10TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: CPT3
 

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RSD200N10TL Datasheet (PDF)

 ..1. Size:239K  rohm
 rsd200n10tl.pdf pdf_icon

RSD200N10TL

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

 5.1. Size:241K  rohm
 rsd200n10.pdf pdf_icon

RSD200N10TL

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

 7.1. Size:1197K  rohm
 rsd200n05.pdf pdf_icon

RSD200N10TL

Data Sheet4V Drive Nch MOSFET RSD200N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitchingPackaging specifications Inner circu

 9.1. Size:366K  rohm
 rsd201n10.pdf pdf_icon

RSD200N10TL

RSD201N10 Nch 100V 20A Power MOSFET DatasheetlOutlineVDSS100VCPT3(SC-63)RDS(on) (Max.)46mW(3) ID20A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.*1 (1) Gate 2) Fast switching speed.(2) Drain (1) (3) Source 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.*2 BODY DIODE 5) Pb-f

MOSTRAR MÁS

Otros transistores... RSD080P05FRA , RSD100N10FRA , RSD131P10 , RSD131P10FRA , RSD140P06FRA , RSD150N06FRA , RSD160P05FRA , RSD175N10FRA , K4145 , RSD201N10 , RSD201N10FRA , RSD221N06 , RSD221N06FRA , RSE002P03TL , RSF010P03TL , RSF014N03TL , RSH065N03TB1 .

History: AO4862E | OSG60R108JZF | HTM200P03 | P1604ETF | CJL2013 | IPD220N06L3G | IPD50N04S4-08

 

 
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