RSM002P03T2L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSM002P03T2L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: VMT3
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RSM002P03T2L Datasheet (PDF)
rsm002p03t2l.pdf

RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.43) 4V drive. 0.50.8(1)Gate(2)Source(3)Drain Abbreviated symbol : WP ApplicationsSwitching Packaging specifications Inner circuit Package Taping
rsm002p03.pdf

RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.43) 4V drive. 0.50.8(1)Gate(2)Source(3)Drain Abbreviated symbol : WP ApplicationsSwitching Packaging specifications Inner circuit Package Taping
rsm002n06.pdf

2.5V Drive Nch MOSFET RSM002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RK ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T2LBasic ordering unit (pieces) 8000RSM002N06
Otros transistores... RSH090N03TB1 , RSH100N03TB1 , RSH110N03TB1 , RSJ151P10 , RSJ400N06FRA , RSJ400N10 , RSL020P03FRA , RSL020P03TR , AON6380 , RSM5853P , RSQ015N06TR , RSQ020N03FRA , RSQ020N03TR , RSQ025P03FRA , RSQ025P03TR , RSQ030P03TR , RSQ035N03FRA .
History: JCS6N70S
History: JCS6N70S



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