RSM002P03T2L Specs and Replacement
Type Designator: RSM002P03T2L
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: VMT3
RSM002P03T2L substitution
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RSM002P03T2L datasheet
rsm002p03t2l.pdf
RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET VMT3 1.2 0.32 Features (3) 1) Low On-resistance. 2) Small package (VMT3). (1)(2) 0.22 0.13 0.4 0.4 3) 4V drive. 0.5 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol WP Applications Switching Packaging specifications Inner circuit Package Taping... See More ⇒
rsm002p03.pdf
RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET VMT3 1.2 0.32 Features (3) 1) Low On-resistance. 2) Small package (VMT3). (1)(2) 0.22 0.13 0.4 0.4 3) 4V drive. 0.5 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol WP Applications Switching Packaging specifications Inner circuit Package Taping... See More ⇒
Detailed specifications: RSH090N03TB1, RSH100N03TB1, RSH110N03TB1, RSJ151P10, RSJ400N06FRA, RSJ400N10, RSL020P03FRA, RSL020P03TR, NCEP15T14, RSM5853P, RSQ015N06TR, RSQ020N03FRA, RSQ020N03TR, RSQ025P03FRA, RSQ025P03TR, RSQ030P03TR, RSQ035N03FRA
Keywords - RSM002P03T2L MOSFET specs
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