RSQ030P03TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSQ030P03TR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TSMT6

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RSQ030P03TR datasheet

 ..1. Size:93K  rohm
 rsq030p03tr.pdf pdf_icon

RSQ030P03TR

RSQ030P03 Transistor DC-DC Converter (-30V, -3A) RSQ030P03 External dimensions (Units mm) Features 1) Low On-resistance.(90m at 4.5V) 2) High Power Package. TSMT6 2.8 3) High speed switching. 1.6 4) Low voltage drive.(4.5V) Each lead has same dimensions Abbreviatedsymbol TN Applications DC-DC converter Equivalent circuit Structure Silicon P-channel

 9.1. Size:96K  rohm
 rsq035p03.pdf pdf_icon

RSQ030P03TR

RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V) 0.16 0.4 Each lead has same dimensions A

 9.2. Size:952K  rohm
 rsq035p03fra.pdf pdf_icon

RSQ030P03TR

RSQ035P03FRA RSQ035P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ035P03FRA RSQ035P03 Structure External dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V)

 9.3. Size:914K  rohm
 rsq035n03fra.pdf pdf_icon

RSQ030P03TR

RSQ035N03FRA RSQ035N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSQ035N03 RSQ035N03FRA Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead

MOSTRAR MÁS

Otros transistores... RSL020P03TR, RSM002P03T2L, RSM5853P, RSQ015N06TR, RSQ020N03FRA, RSQ020N03TR, RSQ025P03FRA, RSQ025P03TR, 4N60, RSQ035N03FRA, RSQ035N03TR, RSQ035P03FRA, RSQ035P03TR, RSQ045N03FRA, RSQ045N03TR, RSR010N10FHA, RSR015P03TL