RSQ030P03TR - параметры транзистора MOSFET, его аналоги, datasheet

RSQ030P03TR Datasheet (PDF)

..1. Size:93K rohm
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RSQ030P03 Transistor DC-DC Converter (-30V, -3A) RSQ030P03 External dimensions (Units : mm) Features 1) Low On-resistance.(90m at 4.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(4.5V) Each lead has same dimensionsAbbreviatedsymbol : TN Applications DC-DC converter Equivalent circuit Structure Silicon P-channel

9.1. Size:96K rohm
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RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V) 0.160.4Each lead has same dimensionsA

9.2. Size:952K rohm
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RSQ035P03FRARSQ035P03TransistorAEC-Q101 Qualified4V Drive Pch MOS FET RSQ035P03FRARSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V)

9.3. Size:914K rohm
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RSQ035N03FRARSQ035N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSQ035N03RSQ035N03FRA Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)1pin mark0.160.4 ApplicationsEach lead