Справочник MOSFET. RSQ030P03TR

 

RSQ030P03TR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RSQ030P03TR
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TSMT6

 Аналог (замена) для RSQ030P03TR

 

 

RSQ030P03TR Datasheet (PDF)

 ..1. Size:93K  rohm
 rsq030p03tr.pdf

RSQ030P03TR RSQ030P03TR

RSQ030P03 Transistor DC-DC Converter (-30V, -3A) RSQ030P03 External dimensions (Units : mm) Features 1) Low On-resistance.(90m at 4.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(4.5V) Each lead has same dimensionsAbbreviatedsymbol : TN Applications DC-DC converter Equivalent circuit Structure Silicon P-channel

 9.1. Size:96K  rohm
 rsq035p03.pdf

RSQ030P03TR RSQ030P03TR

RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V) 0.160.4Each lead has same dimensionsA

 9.2. Size:952K  rohm
 rsq035p03fra.pdf

RSQ030P03TR RSQ030P03TR

RSQ035P03FRARSQ035P03TransistorAEC-Q101 Qualified4V Drive Pch MOS FET RSQ035P03FRARSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V)

 9.3. Size:914K  rohm
 rsq035n03fra.pdf

RSQ030P03TR RSQ030P03TR

RSQ035N03FRARSQ035N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSQ035N03RSQ035N03FRA Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)1pin mark0.160.4 ApplicationsEach lead

 9.4. Size:85K  rohm
 rsq035p03tr.pdf

RSQ030P03TR RSQ030P03TR

RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive. (4V) 0.160.4Each lead has same dimensionsA

 9.5. Size:53K  rohm
 rsq035n03tr.pdf

RSQ030P03TR RSQ030P03TR

RSQ035N03 Transistors 4V Drive Nch MOS FET RSQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1 (1) (2) (3)1pin mark0.160.4 ApplicationsEach lead has same dimensionsSwitching Abbreviate

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