RSQ035N03TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSQ035N03TR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.062 Ohm

Encapsulados: TSMT6

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RSQ035N03TR datasheet

 ..1. Size:53K  rohm
 rsq035n03tr.pdf pdf_icon

RSQ035N03TR

RSQ035N03 Transistors 4V Drive Nch MOS FET RSQ035N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviate

 5.1. Size:914K  rohm
 rsq035n03fra.pdf pdf_icon

RSQ035N03TR

RSQ035N03FRA RSQ035N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSQ035N03 RSQ035N03FRA Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead

 8.1. Size:96K  rohm
 rsq035p03.pdf pdf_icon

RSQ035N03TR

RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V) 0.16 0.4 Each lead has same dimensions A

 8.2. Size:952K  rohm
 rsq035p03fra.pdf pdf_icon

RSQ035N03TR

RSQ035P03FRA RSQ035P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ035P03FRA RSQ035P03 Structure External dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V)

MOSTRAR MÁS

Otros transistores... RSM5853P, RSQ015N06TR, RSQ020N03FRA, RSQ020N03TR, RSQ025P03FRA, RSQ025P03TR, RSQ030P03TR, RSQ035N03FRA, IRF1407, RSQ035P03FRA, RSQ035P03TR, RSQ045N03FRA, RSQ045N03TR, RSR010N10FHA, RSR015P03TL, RSR020N06TL, RSR020P03