RSQ035N03TR Specs and Replacement

Type Designator: RSQ035N03TR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: TSMT6

RSQ035N03TR substitution

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RSQ035N03TR datasheet

 ..1. Size:53K  rohm
 rsq035n03tr.pdf pdf_icon

RSQ035N03TR

RSQ035N03 Transistors 4V Drive Nch MOS FET RSQ035N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviate... See More ⇒

 5.1. Size:914K  rohm
 rsq035n03fra.pdf pdf_icon

RSQ035N03TR

RSQ035N03FRA RSQ035N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSQ035N03 RSQ035N03FRA Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead ... See More ⇒

 8.1. Size:96K  rohm
 rsq035p03.pdf pdf_icon

RSQ035N03TR

RSQ035P03 Transistor 4V Drive Pch MOS FET RSQ035P03 Structure External dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V) 0.16 0.4 Each lead has same dimensions A... See More ⇒

 8.2. Size:952K  rohm
 rsq035p03fra.pdf pdf_icon

RSQ035N03TR

RSQ035P03FRA RSQ035P03 Transistor AEC-Q101 Qualified 4V Drive Pch MOS FET RSQ035P03FRA RSQ035P03 Structure External dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(65m at 4.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V) ... See More ⇒

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Detailed specifications: RSM5853P, RSQ015N06TR, RSQ020N03FRA, RSQ020N03TR, RSQ025P03FRA, RSQ025P03TR, RSQ030P03TR, RSQ035N03FRA, IRF1407, RSQ035P03FRA, RSQ035P03TR, RSQ045N03FRA, RSQ045N03TR, RSR010N10FHA, RSR015P03TL, RSR020N06TL, RSR020P03

Keywords - RSQ035N03TR MOSFET specs

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