RSR020P05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RSR020P05
   Código: ZH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 4.5 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TSMT3

Búsqueda de reemplazo de MOSFET RSR020P05

RSR020P05 Datasheet (PDF)

..1. Size:563K rohm
rsr020p05.pdf

RSR020P05 Pch -45V -2.0A Power MOSFET DatasheetlOutlineVDSS-45VTSMT3 (3) RDS(on) (Max.)190mW(1) ID-2.0APD1.0W(2) lFeatures lInner circuit1) Low on - resistance.2) Built-in G-S Protection Diode.(1) Gate (2) Source 3) Small Surface Mount Package (TSMT3).(3) Drain 4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTION DIODE lPackagin

0.1. Size:1038K rohm
rsr020p05fra.pdf

RSR020P05FRA Pch -45V -2.0A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS-45VTSMT3 (3) RDS(on) (Max.)190mW(1) ID-2.0APD1.0W(2) lFeatures lInner circuit1) Low on - resistance.2) Built-in G-S Protection Diode.(1) Gate (2) Source 3) Small Surface Mount Package (TSMT3).(3) Drain 4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTE

6.1. Size:68K rohm
rsr020p03 rsr020p03tl.pdf

RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.73 Features ( )1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WZ Applications(3) D

8.1. Size:592K rohm
rsr020n06tl.pdf

RSR020N06 Nch 60V 2A Power MOSFET DatasheetlOutlineVDSS TSMT3 60V(3) RDS(on) (Max.)170mW(1) ID2A(2) PD1.0WlFeatures lInner circuit1) Low on - resistance.(1) Gate 2) Built-in G-S Protection Diode.(2) Source (3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging speci

8.2. Size:193K rohm
rsr020n06.pdf

4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low on-resistance. (1) (2)2) Built-in G-S Protection Diode. 0.95 0.950.163) Small Surface Mount Package (TSMT3) . 1.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PZ(3) Drain Application Switching

8.3. Size:1735K cn vbsemi
rsr020n06tl.pdf

RSR020N06TLwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)

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