All MOSFET. RSR020P05 Datasheet

 

RSR020P05 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSR020P05
   Marking Code: ZH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TSMT3

 RSR020P05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSR020P05 Datasheet (PDF)

 ..1. Size:563K  rohm
 rsr020p05.pdf

RSR020P05 RSR020P05

RSR020P05 Pch -45V -2.0A Power MOSFET DatasheetlOutlineVDSS-45VTSMT3 (3) RDS(on) (Max.)190mW(1) ID-2.0APD1.0W(2) lFeatures lInner circuit1) Low on - resistance.2) Built-in G-S Protection Diode.(1) Gate (2) Source 3) Small Surface Mount Package (TSMT3).(3) Drain 4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTION DIODE lPackagin

 0.1. Size:1038K  rohm
 rsr020p05fra.pdf

RSR020P05 RSR020P05

RSR020P05FRA Pch -45V -2.0A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS-45VTSMT3 (3) RDS(on) (Max.)190mW(1) ID-2.0APD1.0W(2) lFeatures lInner circuit1) Low on - resistance.2) Built-in G-S Protection Diode.(1) Gate (2) Source 3) Small Surface Mount Package (TSMT3).(3) Drain 4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTE

 6.1. Size:68K  rohm
 rsr020p03 rsr020p03tl.pdf

RSR020P05 RSR020P05

RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.73 Features ( )1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WZ Applications(3) D

 8.1. Size:592K  rohm
 rsr020n06tl.pdf

RSR020P05 RSR020P05

RSR020N06 Nch 60V 2A Power MOSFET DatasheetlOutlineVDSS TSMT3 60V(3) RDS(on) (Max.)170mW(1) ID2A(2) PD1.0WlFeatures lInner circuit1) Low on - resistance.(1) Gate 2) Built-in G-S Protection Diode.(2) Source (3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging speci

 8.2. Size:193K  rohm
 rsr020n06.pdf

RSR020P05 RSR020P05

4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low on-resistance. (1) (2)2) Built-in G-S Protection Diode. 0.95 0.950.163) Small Surface Mount Package (TSMT3) . 1.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PZ(3) Drain Application Switching

 8.3. Size:1735K  cn vbsemi
 rsr020n06tl.pdf

RSR020P05 RSR020P05

RSR020N06TLwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AM1331P

 

 
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