RSS105N03FU6TB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSS105N03FU6TB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0117 Ohm

Encapsulados: SOP-8

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RSS105N03FU6TB datasheet

 ..1. Size:58K  rohm
 rss105n03fu6tb rss105n03tb.pdf pdf_icon

RSS105N03FU6TB

RSS105N03 Transistor Switching (30V, 10.5A) RSS105N03 External dimensions (Unit mm) Features 1) Low on-resistance. SOP8 5.0 0.2 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.2 0.1 Applications (1)Source (2)Source Power switching, DC/DC converter. (3)Source (4)Gate 0.4 0.1 1.27 (5)Drain 0.1 (6)Drain Each lead has same d

 9.1. Size:58K  rohm
 rss100n03fu6tb rss100n03tb.pdf pdf_icon

RSS105N03FU6TB

RSS100N03 Transistor Switching (30V, 10A) RSS100N03 External dimensions (Unit mm) Features 1) Low on-resistance. SOP8 5.0 0.2 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.2 0.1 Applications (1)Source (2)Source Power switching, DC/DC converter. (3)Source (4)Gate 0.4 0.1 1.27 (5)Drain 0.1 (6)Drain Each lead has same dim

 9.2. Size:865K  cn vbsemi
 rss100n03t.pdf pdf_icon

RSS105N03FU6TB

RSS100N03T www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

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