RSS105N03FU6TB Datasheet and Replacement
Type Designator: RSS105N03FU6TB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0117 Ohm
Package: SOP-8
RSS105N03FU6TB substitution
RSS105N03FU6TB Datasheet (PDF)
rss105n03fu6tb rss105n03tb.pdf

RSS105N03 Transistor Switching (30V, 10.5A) RSS105N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP85.00.22) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.20.1 Applications (1)Source(2)SourcePower switching, DC/DC converter. (3)Source(4)Gate0.40.11.27(5)Drain0.1(6)DrainEach lead has same d
rss100n03fu6tb rss100n03tb.pdf

RSS100N03 Transistor Switching (30V, 10A) RSS100N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP85.00.22) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.20.1 Applications (1)Source(2)SourcePower switching, DC/DC converter. (3)Source(4)Gate0.40.11.27(5)Drain0.1(6)DrainEach lead has same dim
rss100n03t.pdf

RSS100N03Twww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: RSS075P03TB , RSS085N05 , RSS090N03FU6TB , RSS090P03FU6TB , RSS090P03TB , RSS095N05 , RSS100N03FU6TB , RSS100N03TB , IRFP064N , RSS105N03TB , RSS110N03FU6TB , RSS110N03TB , RSS120N03FU6TB , RSS120N03TB , RSS125N03FU6TB , RSS125N03TB , RSS130N03FU6TB .
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