PMBFJ112 Todos los transistores

 

PMBFJ112 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMBFJ112
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.005 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

PMBFJ112 Datasheet (PDF)

 ..1. Size:32K  philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf pdf_icon

PMBFJ112

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

 ..2. Size:47K  philips
pmbfj111 pmbfj112 pmbfj113.pdf pdf_icon

PMBFJ112

PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

 7.1. Size:32K  philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf pdf_icon

PMBFJ112

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

 7.2. Size:46K  philips
pmbfj108 pmbfj109 pmbfj110.pdf pdf_icon

PMBFJ112

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

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History: 2SK2751 | NCV8405 | NTLJS4159NT1G | SGSP477 | WFW40N25W | SWI130R06VT | FDS6892A

 

 
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