Справочник MOSFET. PMBFJ112

 

PMBFJ112 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMBFJ112
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.005 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 50 Ohm
   Тип корпуса: SOT23
     - подбор MOSFET транзистора по параметрам

 

PMBFJ112 Datasheet (PDF)

 ..1. Size:32K  philips
 pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf pdf_icon

PMBFJ112

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low

 ..2. Size:47K  philips
 pmbfj111 pmbfj112 pmbfj113.pdf pdf_icon

PMBFJ112

PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

 7.1. Size:32K  philips
 pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf pdf_icon

PMBFJ112

DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt

 7.2. Size:46K  philips
 pmbfj108 pmbfj109 pmbfj110.pdf pdf_icon

PMBFJ112

PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

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History: CET04N10 | H5N2004DS

 

 
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