RTF020P02TL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTF020P02TL

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TUMT3

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RTF020P02TL datasheet

 ..1. Size:88K  rohm
 rtf020p02tl.pdf pdf_icon

RTF020P02TL

RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has

 5.1. Size:94K  rohm
 rtf020p02.pdf pdf_icon

RTF020P02TL

RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 Dimensions (Unit mm) Structure Silicon P-channel TUMT3 MOSFET Features 1) Low on-resistance. (120m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol WM (3) Drain Applications DC-DC converter Packaging specifications Equi

 9.1. Size:940K  rohm
 rtf025n03fra.pdf pdf_icon

RTF020P02TL

RTF025N03 RTF025N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTF025N03 RTF025N03FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packag

 9.2. Size:81K  rohm
 rtf025n03tl.pdf pdf_icon

RTF020P02TL

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packaging specifications Inner circuit (3) P

MOSTRAR MÁS

Otros transistores... RT3U22M, RT3U33M, RTE002P02TL, RTF010P02, RTF010P02TL, RTF015N03TL, RTF015P02TL, RTF020P02, 2N7002, RTF025N03FRA, RTF025N03TL, RTL020P02FRA, RTL020P02TR, RTL030P02TR, RTL035N03FRA, RTL035N03TR, RTM002P02T2L