RTF020P02TL. Аналоги и основные параметры

Наименование производителя: RTF020P02TL

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 110 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm

Тип корпуса: TUMT3

Аналог (замена) для RTF020P02TL

- подборⓘ MOSFET транзистора по параметрам

 

RTF020P02TL даташит

 ..1. Size:88K  rohm
 rtf020p02tl.pdf pdf_icon

RTF020P02TL

RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT3 2.0 0.1 0.85MAX 2) High power package. 0.77 0.05 0.3+0.1 -0.05 3) High speed switching. (3) 4) Low voltage drive. (2.5V) 0 to 0.1 (1) (2) Applications 0.65 0.65 0.17 0.05 DC-DC converter 1.3 0.1 Each lead has

 5.1. Size:94K  rohm
 rtf020p02.pdf pdf_icon

RTF020P02TL

RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 Dimensions (Unit mm) Structure Silicon P-channel TUMT3 MOSFET Features 1) Low on-resistance. (120m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate 4) Low voltage drive. (2.5V) (2) Source Abbreviated symbol WM (3) Drain Applications DC-DC converter Packaging specifications Equi

 9.1. Size:940K  rohm
 rtf025n03fra.pdf pdf_icon

RTF020P02TL

RTF025N03 RTF025N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTF025N03 RTF025N03FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packag

 9.2. Size:81K  rohm
 rtf025n03tl.pdf pdf_icon

RTF020P02TL

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate (2) Source Abbreviated symbol PL Applications (3) Drain Switching Packaging specifications Inner circuit (3) P

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... RT3U22M, RT3U33M, RTE002P02TL, RTF010P02, RTF010P02TL, RTF015N03TL, RTF015P02TL, RTF020P02, 2N7002, RTF025N03FRA, RTF025N03TL, RTL020P02FRA, RTL020P02TR, RTL030P02TR, RTL035N03FRA, RTL035N03TR, RTM002P02T2L