RTF025N03FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RTF025N03FRA
   Código: PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.8 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 2.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 3.7 nC
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 70 pF
   Resistencia entre drenaje y fuente RDS(on): 0.067 Ohm
   Paquete / Cubierta: TUMT3

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RTF025N03FRA Datasheet (PDF)

..1. Size:940K rohm
rtf025n03fra.pdf

RTF025N03RTF025N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOSFETRTF025N03RTF025N03FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packag

5.1. Size:81K rohm
rtf025n03tl.pdf

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P

5.2. Size:83K rohm
rtf025n03.pdf

9.1. Size:88K rohm
rtf020p02tl.pdf

RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has

9.2. Size:94K rohm
rtf020p02.pdf

RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. (120m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate4) Low voltage drive. (2.5V) (2) SourceAbbreviated symbol : WM(3) Drain Applications DC-DC converter Packaging specifications Equi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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