Справочник MOSFET. RTF025N03FRA

 

RTF025N03FRA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RTF025N03FRA
   Маркировка: PL
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.8 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 2.5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 3.7 nC
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 70 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.067 Ohm
   Тип корпуса: TUMT3

 Аналог (замена) для RTF025N03FRA

 

 

RTF025N03FRA Datasheet (PDF)

 ..1. Size:940K  rohm
 rtf025n03fra.pdf

RTF025N03FRA RTF025N03FRA

RTF025N03RTF025N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOSFETRTF025N03RTF025N03FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packag

 5.1. Size:81K  rohm
 rtf025n03tl.pdf

RTF025N03FRA RTF025N03FRA

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P

 5.2. Size:83K  rohm
 rtf025n03.pdf

RTF025N03FRA RTF025N03FRA

RTF025N03 Transistors 2.5V Drive Nch MOSFET RTF025N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate(2) SourceAbbreviated symbol : PL Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P

 9.1. Size:88K  rohm
 rtf020p02tl.pdf

RTF025N03FRA RTF025N03FRA

RTF020P02 Transistors DC-DC Converter (-20V, -2.0A) RTF020P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT32.00.1 0.85MAX2) High power package. 0.770.050.3+0.1-0.053) High speed switching. (3)4) Low voltage drive. (2.5V) 0 to 0.1(1) (2) Applications 0.65 0.650.170.05DC-DC converter 1.30.1Each lead has

 9.2. Size:94K  rohm
 rtf020p02.pdf

RTF025N03FRA RTF025N03FRA

RTF020P02 Transistors 2.5V Drive Pch MOSFET RTF020P02 Dimensions (Unit : mm) Structure Silicon P-channel TUMT3MOSFET Features 1) Low on-resistance. (120m at 2.5V) 2) High power package. 3) High speed switching. (1) Gate4) Low voltage drive. (2.5V) (2) SourceAbbreviated symbol : WM(3) Drain Applications DC-DC converter Packaging specifications Equi

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History: KTK5132U

 

 
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