RTQ020N03FRA Todos los transistores

 

RTQ020N03FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTQ020N03FRA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TSMT6
 

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RTQ020N03FRA Datasheet (PDF)

 ..1. Size:913K  rohm
 rtq020n03fra.pdf pdf_icon

RTQ020N03FRA

RTQ020N03RTQ020N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ020N03FRARTQ020N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark

 5.1. Size:55K  rohm
 rtq020n03.pdf pdf_icon

RTQ020N03FRA

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 5.2. Size:53K  rohm
 rtq020n03tr.pdf pdf_icon

RTQ020N03FRA

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 6.1. Size:217K  rohm
 rtq020n05.pdf pdf_icon

RTQ020N03FRA

2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.71) Low On-resistance. (6) (5) (4)2) Space savingsmall surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions ApplicationsAbbreviated symbo

MOSTRAR MÁS

Otros transistores... RTF025N03TL , RTL020P02FRA , RTL020P02TR , RTL030P02TR , RTL035N03FRA , RTL035N03TR , RTM002P02T2L , RTP315N10F7 , IRFB3607 , RTQ020N03TR , RTQ020N05TR , RTQ025P02FRA , RTQ025P02TR , RTQ030P02TR , RTQ035N03FRA , RTQ035N03TR , RTQ035P02FHA .

History: 4N65G-K08-5060-R | 4N65L-TN3-R | ME7705 | SMG2318N | IRF3717PBF | SI4447ADY | AP2732GK

 

 
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