RTQ020N03TR Todos los transistores

 

RTQ020N03TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTQ020N03TR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TSMT6
     - Selección de transistores por parámetros

 

RTQ020N03TR Datasheet (PDF)

 ..1. Size:53K  rohm
 rtq020n03tr.pdf pdf_icon

RTQ020N03TR

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 5.1. Size:55K  rohm
 rtq020n03.pdf pdf_icon

RTQ020N03TR

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 5.2. Size:913K  rohm
 rtq020n03fra.pdf pdf_icon

RTQ020N03TR

RTQ020N03RTQ020N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ020N03FRARTQ020N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark

 6.1. Size:217K  rohm
 rtq020n05.pdf pdf_icon

RTQ020N03TR

2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.71) Low On-resistance. (6) (5) (4)2) Space savingsmall surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions ApplicationsAbbreviated symbo

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SVSP14N60TD2 | IXTU2N80P

 

 
Back to Top

 


 
.