RTQ035P02TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTQ035P02TR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TSMT6

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RTQ035P02TR datasheet

 ..1. Size:94K  rohm
 rtq035p02tr.pdf pdf_icon

RTQ035P02TR

RTQ035P02 Transistor DC-DC Converter (-20V, -3.5A) RTQ035P02 External dimensions (Units mm) Features 1) Low On-resistance.(80m at 2.5V) 2) High Power Package. TSMT6 2.8 3) High speed switching. 1.6 4) Low voltage drive.(2.5V) Each lead has same dimensions Abbreviatedsymbol TL Applications DC-DC converter Equivalent circuit Structure Silicon P-channel

 5.1. Size:1036K  rohm
 rtq035p02fha.pdf pdf_icon

RTQ035P02TR

RTQ035P02FHA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FHA RTQ035P02 External dimensions (Unit mm) Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive.(2.5

 8.1. Size:53K  rohm
 rtq035n03tr.pdf pdf_icon

RTQ035P02TR

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions

 8.2. Size:55K  rohm
 rtq035n03.pdf pdf_icon

RTQ035P02TR

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions

MOSTRAR MÁS

Otros transistores... RTQ020N03TR, RTQ020N05TR, RTQ025P02FRA, RTQ025P02TR, RTQ030P02TR, RTQ035N03FRA, RTQ035N03TR, RTQ035P02FHA, CS150N03A8, RTQ040P02TR, RTQ045N03FRA, RTQ045N03TR, RTR020N05FRA, RTR020N05TL, RTR020P02, RTR020P02FRA, RTR020P02TL