RTQ040P02TR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTQ040P02TR

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TSMT6

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RTQ040P02TR datasheet

 ..1. Size:77K  rohm
 rtq040p02tr.pdf pdf_icon

RTQ040P02TR

RTQ040P02 Transistors DC-DC Converter (-20V, -4.0A) RTQ040P02 External dimensions (Unit mm) Features 1) Low on-resistance. (110m at 2.5V) TSMT6 2.8 2) High power package. 1.6 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Drain Applications (2) Drain DC-DC converter (3) Gate Each lead has same dimensions (4) Source (5) Drain (6) Drain Abbrev

 9.1. Size:927K  rohm
 rtq045n03fra.pdf pdf_icon

RTQ040P02TR

RTQ045N03 RTQ045N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ045N03 RTQ045N03FRA External dimensions (Unit mm) Structure Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low on-resistance. 0 0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small Surface Mount Package (TSMT6) . 0.16 0.

 9.2. Size:66K  rohm
 rtq045n03.pdf pdf_icon

RTQ040P02TR

RTQ045N03 Transistors 2.5V Drive Nch MOS FET RTQ045N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low on-resistance. 0 0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small Surface Mount Package (TSMT6) . 0.16 0.4 Each lead has same dimensions Abbreviat

 9.3. Size:64K  rohm
 rtq045n03tr.pdf pdf_icon

RTQ040P02TR

RTQ045N03 Transistors 2.5V Drive Nch MOS FET RTQ045N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low on-resistance. 0 0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small Surface Mount Package (TSMT6) . 0.16 0.4 Each lead has same dimensions Abbreviat

MOSTRAR MÁS

Otros transistores... RTQ020N05TR, RTQ025P02FRA, RTQ025P02TR, RTQ030P02TR, RTQ035N03FRA, RTQ035N03TR, RTQ035P02FHA, RTQ035P02TR, NCEP15T14, RTQ045N03FRA, RTQ045N03TR, RTR020N05FRA, RTR020N05TL, RTR020P02, RTR020P02FRA, RTR020P02TL, RTR025N03FRA