RTQ045N03FRA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTQ045N03FRA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm

Encapsulados: TSMT6

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RTQ045N03FRA datasheet

 ..1. Size:927K  rohm
 rtq045n03fra.pdf pdf_icon

RTQ045N03FRA

RTQ045N03 RTQ045N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ045N03 RTQ045N03FRA External dimensions (Unit mm) Structure Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low on-resistance. 0 0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small Surface Mount Package (TSMT6) . 0.16 0.

 5.1. Size:66K  rohm
 rtq045n03.pdf pdf_icon

RTQ045N03FRA

RTQ045N03 Transistors 2.5V Drive Nch MOS FET RTQ045N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low on-resistance. 0 0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small Surface Mount Package (TSMT6) . 0.16 0.4 Each lead has same dimensions Abbreviat

 5.2. Size:64K  rohm
 rtq045n03tr.pdf pdf_icon

RTQ045N03FRA

RTQ045N03 Transistors 2.5V Drive Nch MOS FET RTQ045N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT6 MOS FET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low on-resistance. 0 0.1 (1) (2) (3) 2) Built-in G-S Protection Diode. 1pin mark 3) Small Surface Mount Package (TSMT6) . 0.16 0.4 Each lead has same dimensions Abbreviat

 9.1. Size:77K  rohm
 rtq040p02tr.pdf pdf_icon

RTQ045N03FRA

RTQ040P02 Transistors DC-DC Converter (-20V, -4.0A) RTQ040P02 External dimensions (Unit mm) Features 1) Low on-resistance. (110m at 2.5V) TSMT6 2.8 2) High power package. 1.6 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Drain Applications (2) Drain DC-DC converter (3) Gate Each lead has same dimensions (4) Source (5) Drain (6) Drain Abbrev

MOSTRAR MÁS

Otros transistores... RTQ025P02FRA, RTQ025P02TR, RTQ030P02TR, RTQ035N03FRA, RTQ035N03TR, RTQ035P02FHA, RTQ035P02TR, RTQ040P02TR, AON7506, RTQ045N03TR, RTR020N05FRA, RTR020N05TL, RTR020P02, RTR020P02FRA, RTR020P02TL, RTR025N03FRA, RTR025N03TL