RTR020P02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RTR020P02
   Código: TX
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 4.9 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: TSMT3

Búsqueda de reemplazo de MOSFET RTR020P02

RTR020P02 Datasheet (PDF)

..1. Size:84K rohm
rtr020p02.pdf

RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT31.0MAX2.90.850.4 0.7 Features ( )31) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 20.95 0.953) Small Surface Mount Package (TSMT3). 0.161.9 (1) Gate Each lead has same dimensions(2) Source Application

..2. Size:906K cn vbsemi
rtr020p02.pdf

RTR020P02www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

0.1. Size:100K rohm
rtr020p02tl.pdf

RTR020P02 Transistors Switching (-20V, -2.0A) RTR020P02 External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT32.90.1 1.0MAX.2) Built-in G-S Protection Diode. 0.850.10.4+0.1-0.05 0.70.13) Small and Surface Mount Package (TSMT3). (3) Application 0~0.1Power switching, DC / DC converter. (1) (2) 0.95 0.95+0.10.16-0.061.90.2Each l

0.2. Size:955K rohm
rtr020p02fra.pdf

RTR020P02FRARTR020P02TransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR020P02RTR020P02FRA Structure External dimensions (Unit : mm) Silicon P-channel MOS FETTSMT31.0MAX2.90.850.4 0.7 Features ( )31) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 20.95 0.953) Small Surface Mount Package (TSMT3). 0.161.9(1) Gate Each lead has

8.1. Size:53K rohm
rtr020n05tl.pdf

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7 Features (3)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated

8.2. Size:55K rohm
rtr020n05.pdf

8.3. Size:912K rohm
rtr020n05fra.pdf

RTR020N05RTR020N05FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTR020N05RTR020N05FRA Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7 Features (3)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead h

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