RTR020P02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTR020P02

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm

Encapsulados: TSMT3

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RTR020P02 datasheet

 ..1. Size:84K  rohm
rtr020p02.pdf pdf_icon

RTR020P02

RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Application

 ..2. Size:906K  cn vbsemi
rtr020p02.pdf pdf_icon

RTR020P02

RTR020P02 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 0.1. Size:100K  rohm
rtr020p02tl.pdf pdf_icon

RTR020P02

RTR020P02 Transistors Switching (-20V, -2.0A) RTR020P02 External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 2.9 0.1 1.0MAX. 2) Built-in G-S Protection Diode. 0.85 0.1 0.4+0.1 -0.05 0.7 0.1 3) Small and Surface Mount Package (TSMT3). (3) Application 0 0.1 Power switching, DC / DC converter. (1) (2) 0.95 0.95 +0.1 0.16 -0.06 1.9 0.2 Each l

 0.2. Size:955K  rohm
rtr020p02fra.pdf pdf_icon

RTR020P02

RTR020P02FRA RTR020P02 Transistors AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTR020P02 RTR020P02FRA Structure External dimensions (Unit mm) Silicon P-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 Features ( ) 3 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.16 1.9 (1) Gate Each lead has

Otros transistores... RTQ035N03TR, RTQ035P02FHA, RTQ035P02TR, RTQ040P02TR, RTQ045N03FRA, RTQ045N03TR, RTR020N05FRA, RTR020N05TL, AO4407, RTR020P02FRA, RTR020P02TL, RTR025N03FRA, RTR025N03TL, RTR025N05FRA, RTR025N05TL, RTR025P02, RTR025P02FRA