Справочник MOSFET. RTR020P02

 

RTR020P02 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RTR020P02
   Маркировка: TX
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.9 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: TSMT3

 Аналог (замена) для RTR020P02

 

 

RTR020P02 Datasheet (PDF)

 ..1. Size:84K  rohm
 rtr020p02.pdf

RTR020P02 RTR020P02

RTR020P02 Transistors 2.5V Drive Pch MOS FET RTR020P02 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT31.0MAX2.90.850.4 0.7 Features ( )31) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 20.95 0.953) Small Surface Mount Package (TSMT3). 0.161.9 (1) Gate Each lead has same dimensions(2) Source Application

 ..2. Size:906K  cn vbsemi
 rtr020p02.pdf

RTR020P02 RTR020P02

RTR020P02www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 0.1. Size:100K  rohm
 rtr020p02tl.pdf

RTR020P02 RTR020P02

RTR020P02 Transistors Switching (-20V, -2.0A) RTR020P02 External dimensions (Unit : mm) Features 1) Low On-resistance. TSMT32.90.1 1.0MAX.2) Built-in G-S Protection Diode. 0.850.10.4+0.1-0.05 0.70.13) Small and Surface Mount Package (TSMT3). (3) Application 0~0.1Power switching, DC / DC converter. (1) (2) 0.95 0.95+0.10.16-0.061.90.2Each l

 0.2. Size:955K  rohm
 rtr020p02fra.pdf

RTR020P02 RTR020P02

RTR020P02FRARTR020P02TransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR020P02RTR020P02FRA Structure External dimensions (Unit : mm) Silicon P-channel MOS FETTSMT31.0MAX2.90.850.4 0.7 Features ( )31) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 20.95 0.953) Small Surface Mount Package (TSMT3). 0.161.9(1) Gate Each lead has

 8.1. Size:53K  rohm
 rtr020n05tl.pdf

RTR020P02 RTR020P02

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7 Features (3)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated

 8.2. Size:55K  rohm
 rtr020n05.pdf

RTR020P02 RTR020P02

RTR020N05 Transistors 2.5V Drive Nch MOS FET RTR020N05 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7 Features (3)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated

 8.3. Size:912K  rohm
 rtr020n05fra.pdf

RTR020P02 RTR020P02

RTR020N05RTR020N05FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTR020N05RTR020N05FRA Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7 Features (3)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead h

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