RTR025N05FRA Todos los transistores

 

RTR025N05FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTR025N05FRA
   Código: PW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 3.2 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: TSMT3

 Búsqueda de reemplazo de MOSFET RTR025N05FRA

 

RTR025N05FRA Datasheet (PDF)

 ..1. Size:1056K  rohm
rtr025n05fra.pdf

RTR025N05FRA
RTR025N05FRA

AEC-Q101 Qualified2.5V Drive Nch MOSFET RTR025N05 RTR025N05FRA Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbo

 5.1. Size:214K  rohm
rtr025n05tl.pdf

RTR025N05FRA
RTR025N05FRA

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions (2) SourceAbbreviated symbol : PW(3) Drain Application

 5.2. Size:216K  rohm
rtr025n05.pdf

RTR025N05FRA
RTR025N05FRA

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.9 0.850.4 0.7( )3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( )1 23) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9(1) Gate Each lead has same dimensions (2) SourceAbbreviated symbol : PW(3) Drain Application

 5.3. Size:1451K  cn vbsemi
rtr025n05t.pdf

RTR025N05FRA
RTR025N05FRA

RTR025N05Twww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


RTR025N05FRA
  RTR025N05FRA
  RTR025N05FRA
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
Back to Top