RTR025P02TL Todos los transistores

 ..1. Size:100K  rohm
 rtr025p02tl.pdf

RTR025P02 Transistors Switching (-20V, -2.5A) RTR025P02 External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 2.9 0.1 1.0MAX. 2) Built-in G-S Protection Diode. Each lead has 0.85 0.1 0.4+0.1 same dimensions -0.05 0.7 0.1 3) Small and Surface Mount Package (TSMT3). (3) Application 0 0.1 Power switching, DC / DC converter. (1) (2) 0.95 0.95 +0.1

 5.1. Size:84K  rohm
 rtr025p02.pdf

RTR025P02 Transistors 2.5V Drive Pch MOS FET RTR025P02 External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 1.0MAX 2) Built-in G-S Protection Diode. 2.9 0.85 3) Small and Surface Mount Package (TSMT3). 0.4 0.7 (3) Application (1) (2) 0.95 0.95 Power switching, DC / DC converter. 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrev

 5.2. Size:955K  rohm
 rtr025p02fra.pdf

RTR025P02 RTR025P02FRA Transistors AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTR025P02 RTR025P02FRA External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 1.0MAX 2) Built-in G-S Protection Diode. 2.9 0.85 3) Small and Surface Mount Package (TSMT3). 0.4 0.7 (3) Application (1) (2) 0.95 0.95 Power switching, DC / DC converter. 0.16 1.9 (1) Gate Each l

 8.1. Size:55K  rohm
 rtr025n03.pdf

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi

 8.2. Size:214K  rohm
 rtr025n05tl.pdf

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol PW (3) Drain Application

 8.3. Size:216K  rohm
 rtr025n05.pdf

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol PW (3) Drain Application

 8.4. Size:913K  rohm
 rtr025n03fra.pdf

RTR025N03FRA RTR025N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR025N03FRA RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead ha

 8.5. Size:53K  rohm
 rtr025n03tl.pdf

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi

 8.6. Size:1056K  rohm
 rtr025n05fra.pdf

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTR025N05 RTR025N05FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbo

 8.7. Size:1451K  cn vbsemi
 rtr025n05t.pdf

RTR025N05T www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 8.8. Size:895K  cn vbsemi
 rtr025n03tl.pdf

RTR025N03TL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)