RTR025P02TL - описание и поиск аналогов

RTR025P02 Transistors Switching (-20V, -2.5A) RTR025P02 External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 2.9 0.1 1.0MAX. 2) Built-in G-S Protection Diode. Each lead has 0.85 0.1 0.4+0.1 same dimensions -0.05 0.7 0.1 3) Small and Surface Mount Package (TSMT3). (3) Application 0 0.1 Power switching, DC / DC converter. (1) (2) 0.95 0.95 +0.1

RTR025P02 Transistors 2.5V Drive Pch MOS FET RTR025P02 External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 1.0MAX 2) Built-in G-S Protection Diode. 2.9 0.85 3) Small and Surface Mount Package (TSMT3). 0.4 0.7 (3) Application (1) (2) 0.95 0.95 Power switching, DC / DC converter. 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrev

RTR025P02 RTR025P02FRA Transistors AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTR025P02 RTR025P02FRA External dimensions (Unit mm) Features 1) Low On-resistance. TSMT3 1.0MAX 2) Built-in G-S Protection Diode. 2.9 0.85 3) Small and Surface Mount Package (TSMT3). 0.4 0.7 (3) Application (1) (2) 0.95 0.95 Power switching, DC / DC converter. 0.16 1.9 (1) Gate Each l

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol PW (3) Drain Application

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol PW (3) Drain Application

RTR025N03FRA RTR025N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR025N03FRA RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead ha

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTR025N05 RTR025N05FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbo

RTR025N05T www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

RTR025N03TL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)