RV2C010UN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RV2C010UN datasheet

..1. Size:2649K rohm
rv2c010un.pdf pdf_icon

RV2C010UN Datasheet Nch 20V 1A Power MOSFET lOutline l VML1006 VDSS 20V RDS(on)(Max.) 470m ID 1.0A PD 400mW lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (VML1006). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Fre

8.1. Size:2444K rohm
rv2c014bc.pdf pdf_icon

RV2C014BC Datasheet Pch -20V -1.4A Small Signal MOSFET lOutline l DFN1006-3 VDSS -20V SC-101 RDS(on)(Max.) 300m VML1006 ID 1.4A PD 600mW lInner circuit l lFeatures l 1) Low on - Resistance, High Current. 2) High Power small mold Package (DFN1006). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagin

9.1. Size:603K rohm
rv2c001zp.pdf pdf_icon

RV2C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V VML1006 (3) RDS(on) (Max.) 3.8W ID -100mA (2) PD 100mW (1) lFeatures lInner circuit 1) Low voltage drive(-1.2V) makes this device ideal for partable equipment. (1) Gate (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in ESD Protection Diode. *1 BODY DIODE *2 ESD PROTECTION

9.2. Size:581K rohm
rv2c002un.pdf pdf_icon

RV2C002UN Nch 20V 180mA Small Signal MOSFET Datasheet lOutline VDSS 20V VML1006 (3) RDS(on) (Max.) 2.0W ID 180mA (2) PD 100mW (1) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. (1) Gate (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in ESD Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE

Otros transistores... RTR030P02TL , RTR040N03FRA , RTR040N03TL , RTU002P02T106 , RV1C001ZP , RV1C002UN , RV2C001ZP , RV2C002UN , IRFB31N20D , RV3C001ZP , RV3C002UN , RVQ040N05TR , RW1C026ZP , RZE002P02TL , RZF020P01TL , RZL025P01TR , RZL035P01TR .