RV2C010UN - параметры транзистора MOSFET, его аналоги, datasheet

RV2C010UN Datasheet (PDF)

..1. Size:2649K rohm
rv2c010un.pdf pdf_icon

RV2C010UNDatasheetNch 20V 1A Power MOSFETlOutlinel VML1006VDSS20VRDS(on)(Max.) 470m ID 1.0A PD400mW lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(VML1006).3) Pb-free lead plating ; RoHS compliant.4) Halogen Fre

8.1. Size:2444K rohm
rv2c014bc.pdf pdf_icon

RV2C014BCDatasheetPch -20V -1.4A Small Signal MOSFETlOutlinel DFN1006-3VDSS-20V SC-101RDS(on)(Max.)300m VML1006ID1.4APD600mW lInner circuitllFeaturesl1) Low on - Resistance, High Current.2) High Power small mold Package(DFN1006).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagin

9.1. Size:603K rohm
rv2c001zp.pdf pdf_icon

RV2C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20VVML1006(3) RDS(on) (Max.)3.8WID-100mA(2) PD100mW(1) lFeatures lInner circuit1) Low voltage drive(-1.2V) makes this device ideal for partable equipment.(1) Gate (2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in ESD Protection Diode.*1 BODY DIODE *2 ESD PROTECTION

9.2. Size:581K rohm
rv2c002un.pdf pdf_icon

RV2C002UN Nch 20V 180mA Small Signal MOSFET DatasheetlOutlineVDSS20VVML1006(3) RDS(on) (Max.)2.0WID180mA(2) PD100mW(1) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this device ideal for partable equipment.(1) Gate (2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in ESD Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .