SC3018 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SC3018
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: SOT-23

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SC3018 Datasheet (PDF)

..1. Size:328K lzg
sc3018.pdf

2SK3018(CS3018) N-Channel MOSFET/N MOS : Purpose: Interfacing, switching. :,,, Features: Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. /Absolute maximum ratings(Ta=25)

9.1. Size:320K toshiba
2sc3011.pdf

2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm High gain: |S21e|2 = 12dB (typ.) Low noise figure: NF = 2.3dB (typ.), f = 1 GHz High fT: f = 6.5 GHz TMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 7

9.2. Size:28K no
2sa1232 2sc3012 2sc3012.pdf

9.3. Size:1244K kexin
2sc3011.pdf

SMD Type TransistorsNPN Transistors2SC3011SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=7V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

9.4. Size:132K inchange semiconductor
2sc3012-3pn.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION With TO-3PN package Complement to type 2SA1232 High transition frequency APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat

9.5. Size:202K inchange semiconductor
2sc3012.pdf

isc Silicon NPN Power Transistor 2SC3012DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1232Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

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