SC3018
MOSFET. Datasheet pdf. Equivalent
Type Designator: SC3018
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 9
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8
Ohm
Package:
SOT-23
SC3018
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SC3018
Datasheet (PDF)
..1. Size:328K lzg
sc3018.pdf
2SK3018(CS3018) N-Channel MOSFET/N MOS : Purpose: Interfacing, switching. :,,, Features: Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. /Absolute maximum ratings(Ta=25)
9.1. Size:320K toshiba
2sc3011.pdf
2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm High gain: |S21e|2 = 12dB (typ.) Low noise figure: NF = 2.3dB (typ.), f = 1 GHz High fT: f = 6.5 GHz TMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 7
9.3. Size:1244K kexin
2sc3011.pdf
SMD Type TransistorsNPN Transistors2SC3011SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=7V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
9.4. Size:132K inchange semiconductor
2sc3012-3pn.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION With TO-3PN package Complement to type 2SA1232 High transition frequency APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat
9.5. Size:202K inchange semiconductor
2sc3012.pdf
isc Silicon NPN Power Transistor 2SC3012DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1232Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
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