SC3018 Specs and Replacement
Type Designator: SC3018
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-23
SC3018 substitution
- MOSFET ⓘ Cross-Reference Search
SC3018 datasheet
2sc3011.pdf
2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF C Band Low Noise Amplifier Applications Unit mm High gain S21e 2 = 12dB (typ.) Low noise figure NF = 2.3dB (typ.), f = 1 GHz High fT f = 6.5 GHz T Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 7... See More ⇒
2sc3011.pdf
SMD Type Transistors NPN Transistors 2SC3011 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=7V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
Detailed specifications: RZF020P01TL, RZL025P01TR, RZL035P01TR, RZM001P02, RZQ045P01TR, RZY200P01TL, S2N7002DM, SBSS84LT1G, MMIS60R580P, SCH1301, SCH1302, SCH1345, SCH2825, SIJ400DP, SIJ420DP, SIJ458DP, SIJ470DP
Keywords - SC3018 MOSFET specs
SC3018 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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