RF1K49086 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RF1K49086

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: MS012AA

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RF1K49086 datasheet

 ..1. Size:142K  intersil
 rf1k49086.pdf pdf_icon

RF1K49086

RF1K49086 Data Sheet August 1999 File Number 3986.5 3.5A, 30V, 0.06 Ohm, Dual N-Channel Features LittleFET Power MOSFET 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum

 6.1. Size:232K  fairchild semi
 rf1k49088.pdf pdf_icon

RF1K49086

RF1K49088 Data Sheet January 2002 3.5A, 30V, 0.06 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum ut

 7.1. Size:248K  fairchild semi
 rf1k49090.pdf pdf_icon

RF1K49086

RF1K49090 Data Sheet January 2002 3.5A, 12V, 0.050 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum u

 7.2. Size:247K  intersil
 rf1k49092.pdf pdf_icon

RF1K49086

RF1K49092 Data Sheet August 1999 File Number 3968.5 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Features Level, Complementary LittleFET Power 3.5A, 12V (N-Channel) MOSFET 2.5A, 12V (P-Channel) This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel) an advanced MegaFET process. This process, which uses rDS(ON) = 0.130 (P-Channel) feature sizes app

MOSTRAR MÁS

Otros transistores... PMBFJ309, PMBFJ310, PN4391, PN4392, PN4393, PN4416, PN4416A, PSMN003-25W, 5N65, RF1K49088, RF1K49090, RF1K49092, RF1K49093, RF1K49154, RF1K49156, RF1K49157, RF1K49211