RF1K49086
MOSFET. Datasheet pdf. Equivalent
Type Designator: RF1K49086
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package: MS012AA
RF1K49086
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RF1K49086
Datasheet (PDF)
..1. Size:142K intersil
rf1k49086.pdf
RF1K49086Data Sheet August 1999 File Number 3986.53.5A, 30V, 0.06 Ohm, Dual N-Channel FeaturesLittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum
6.1. Size:232K fairchild semi
rf1k49088.pdf
RF1K49088Data Sheet January 20023.5A, 30V, 0.06 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum ut
7.1. Size:248K fairchild semi
rf1k49090.pdf
RF1K49090Data Sheet January 20023.5A, 12V, 0.050 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 12VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum u
7.2. Size:247K intersil
rf1k49092.pdf
RF1K49092Data Sheet August 1999 File Number 3968.53.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic FeaturesLevel, Complementary LittleFET Power 3.5A, 12V (N-Channel)MOSFET2.5A, 12V (P-Channel)This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel)an advanced MegaFET process. This process, which usesrDS(ON) = 0.130 (P-Channel)feature sizes app
7.3. Size:141K intersil
rf1k49093.pdf
RF1K49093Data Sheet August 1999 File Number 3969.52.5A, 12V, 0.130 Ohm, Logic Level, Dual FeaturesP-Channel LittleFET Power MOSFET 2.5A, 12VThis Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,
Datasheet: PMBFJ309
, PMBFJ310
, PN4391
, PN4392
, PN4393
, PN4416
, PN4416A
, PSMN003-25W
, 18N50
, RF1K49088
, RF1K49090
, RF1K49092
, RF1K49093
, RF1K49154
, RF1K49156
, RF1K49157
, RF1K49211
.