SIR880ADP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIR880ADP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm

Encapsulados: SO-8

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SIR880ADP datasheet

 ..1. Size:510K  vishay
sir880adp.pdf pdf_icon

SIR880ADP

New Product SiR880ADP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0063 at VGS = 10 V 60 Material categorization 0.0068 at VGS = 7.5 V For definitions of compliance please see 80 60 24 nC www.vishay.com/doc?99912 0.0089 at VGS = 4.5 V 60

 8.1. Size:499K  vishay
sir880dp.pdf pdf_icon

SIR880ADP

New Product SiR880DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested 0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct

 9.1. Size:507K  vishay
sir888dp.pdf pdf_icon

SIR880ADP

New Product SiR888DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00325 at VGS = 10 V 40g 100 % Rg Tested COMPLIANT 25 35.5 nC 0.0040 at VGS = 4.5 V 40g 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 Low-Side Switch in Synchronous Buck

 9.2. Size:184K  vishay
sir882dp.pdf pdf_icon

SIR880ADP

New Product SiR882DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested 0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested 0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di

Otros transistores... SIR870DP, SIR872ADP, SIR872DP, SIR874DP, SIR876ADP, SIR876DP, SIR878ADP, SIR878DP, IRF1405, SIR880DP, SIR882ADP, SIR882DP, SIR888DP, SIR890DP, SIR892DP, SIRA00DP, SIRA02DP