SIR880ADP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR880ADP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 5.4 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 20.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 47.5 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0063 Ohm
Package: SO-8
SIR880ADP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR880ADP Datasheet (PDF)
sir880adp.pdf
New Product SiR880ADPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0063 at VGS = 10 V 60 Material categorization:0.0068 at VGS = 7.5 V For definitions of compliance please see80 60 24 nCwww.vishay.com/doc?999120.0089 at VGS = 4.5 V 60
sir880dp.pdf
New ProductSiR880DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct
sir888dp.pdf
New ProductSiR888DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.00325 at VGS = 10 V 40g 100 % Rg TestedCOMPLIANT 25 35.5 nC0.0040 at VGS = 4.5 V 40g 100 % Avalanche TestedAPPLICATIONSPowerPAK SO-8 Low-Side Switch in Synchronous Buck
sir882dp.pdf
New ProductSiR882DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di
sir882adp.pdf
New ProductSiR882ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition0.0087 at VGS = 10 V TrenchFET Power MOSFET600.0094 at VGS = 7.5 V 100 % Rg and UIS Tested100 60 19.5 nC0.0115 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC60
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
