SIR882ADP Todos los transistores

 

SIR882ADP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIR882ADP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 748 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0087 Ohm
   Paquete / Cubierta: SO-8

 Búsqueda de reemplazo de MOSFET SIR882ADP

 

Principales características: SIR882ADP

 ..1. Size:506K  vishay
 sir882adp.pdf pdf_icon

SIR882ADP

New Product SiR882ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V TrenchFET Power MOSFET 60 0.0094 at VGS = 7.5 V 100 % Rg and UIS Tested 100 60 19.5 nC 0.0115 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 60

 8.1. Size:184K  vishay
 sir882dp.pdf pdf_icon

SIR882ADP

New Product SiR882DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested 0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested 0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di

 9.1. Size:507K  vishay
 sir888dp.pdf pdf_icon

SIR882ADP

New Product SiR888DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00325 at VGS = 10 V 40g 100 % Rg Tested COMPLIANT 25 35.5 nC 0.0040 at VGS = 4.5 V 40g 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 Low-Side Switch in Synchronous Buck

 9.2. Size:499K  vishay
 sir880dp.pdf pdf_icon

SIR882ADP

New Product SiR880DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested 0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct

MOSTRAR MÁS

Otros transistores... SIR872DP , SIR874DP , SIR876ADP , SIR876DP , SIR878ADP , SIR878DP , SIR880ADP , SIR880DP , IRFZ48N , SIR882DP , SIR888DP , SIR890DP , SIR892DP , SIRA00DP , SIRA02DP , SIRA04DP , SIRA06DP .

History: SI4048DY

 

 
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