SIR888DP Todos los transistores

New Product SiR888DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00325 at VGS = 10 V 40g 100 % Rg Tested COMPLIANT 25 35.5 nC 0.0040 at VGS = 4.5 V 40g 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 Low-Side Switch in Synchronous Buck

New Product SiR882DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested 0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested 0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di

New Product SiR882ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V TrenchFET Power MOSFET 60 0.0094 at VGS = 7.5 V 100 % Rg and UIS Tested 100 60 19.5 nC 0.0115 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 60

New Product SiR880DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested 0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct

New Product SiR880ADP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0063 at VGS = 10 V 60 Material categorization 0.0068 at VGS = 7.5 V For definitions of compliance please see 80 60 24 nC www.vishay.com/doc?99912 0.0089 at VGS = 4.5 V 60