All MOSFET. SIR888DP Datasheet

 

SIR888DP Datasheet and Replacement


   Type Designator: SIR888DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 655 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00325 Ohm
   Package: SO-8
 

 SIR888DP substitution

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SIR888DP Datasheet (PDF)

 ..1. Size:507K  vishay
 sir888dp.pdf pdf_icon

SIR888DP

New ProductSiR888DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.00325 at VGS = 10 V 40g 100 % Rg TestedCOMPLIANT 25 35.5 nC0.0040 at VGS = 4.5 V 40g 100 % Avalanche TestedAPPLICATIONSPowerPAK SO-8 Low-Side Switch in Synchronous Buck

 9.1. Size:184K  vishay
 sir882dp.pdf pdf_icon

SIR888DP

New ProductSiR882DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di

 9.2. Size:506K  vishay
 sir882adp.pdf pdf_icon

SIR888DP

New ProductSiR882ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.)Definition0.0087 at VGS = 10 V TrenchFET Power MOSFET600.0094 at VGS = 7.5 V 100 % Rg and UIS Tested100 60 19.5 nC0.0115 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC60

 9.3. Size:499K  vishay
 sir880dp.pdf pdf_icon

SIR888DP

New ProductSiR880DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct

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Datasheet: SIR876ADP , SIR876DP , SIR878ADP , SIR878DP , SIR880ADP , SIR880DP , SIR882ADP , SIR882DP , IRF830 , SIR890DP , SIR892DP , SIRA00DP , SIRA02DP , SIRA04DP , SIRA06DP , SIRA10DP , SIRA12DP .

History: TPCF8301

Keywords - SIR888DP MOSFET datasheet

 SIR888DP cross reference
 SIR888DP equivalent finder
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 SIR888DP replacement

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