SIR888DP Specs and Replacement

Type Designator: SIR888DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 655 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00325 Ohm

Package: SO-8

SIR888DP substitution

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SIR888DP datasheet

 ..1. Size:507K  vishay
 sir888dp.pdf pdf_icon

SIR888DP

New Product SiR888DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00325 at VGS = 10 V 40g 100 % Rg Tested COMPLIANT 25 35.5 nC 0.0040 at VGS = 4.5 V 40g 100 % Avalanche Tested APPLICATIONS PowerPAK SO-8 Low-Side Switch in Synchronous Buck... See More ⇒

 9.1. Size:184K  vishay
 sir882dp.pdf pdf_icon

SIR888DP

New Product SiR882DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V 60 TrenchFET Power MOSFET 100 % Rg Tested 0.0094 at VGS = 7.5 V 100 60 18.3 nC 100 % UIS Tested 0.0115 at VGS = 4.5 V 60 Compliant to RoHS Di... See More ⇒

 9.2. Size:506K  vishay
 sir882adp.pdf pdf_icon

SIR888DP

New Product SiR882ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.0087 at VGS = 10 V TrenchFET Power MOSFET 60 0.0094 at VGS = 7.5 V 100 % Rg and UIS Tested 100 60 19.5 nC 0.0115 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 60... See More ⇒

 9.3. Size:499K  vishay
 sir880dp.pdf pdf_icon

SIR888DP

New Product SiR880DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0059 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0067 at VGS = 7.5 V 80 60 23 nC 100 % Rg Tested 0.0085 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Direct... See More ⇒

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Detailed specifications: SIR876ADP, SIR876DP, SIR878ADP, SIR878DP, SIR880ADP, SIR880DP, SIR882ADP, SIR882DP, IRF830, SIR890DP, SIR892DP, SIRA00DP, SIRA02DP, SIRA04DP, SIRA06DP, SIRA10DP, SIRA12DP

Keywords - SIR888DP MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs