RF1K49092 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RF1K49092

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.5(2.5) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05(0.13) Ohm

Encapsulados: MS012AA

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RF1K49092 datasheet

 ..1. Size:247K  intersil
 rf1k49092.pdf pdf_icon

RF1K49092

RF1K49092 Data Sheet August 1999 File Number 3968.5 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Features Level, Complementary LittleFET Power 3.5A, 12V (N-Channel) MOSFET 2.5A, 12V (P-Channel) This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel) an advanced MegaFET process. This process, which uses rDS(ON) = 0.130 (P-Channel) feature sizes app

 6.1. Size:248K  fairchild semi
 rf1k49090.pdf pdf_icon

RF1K49092

RF1K49090 Data Sheet January 2002 3.5A, 12V, 0.050 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 12V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum u

 6.2. Size:141K  intersil
 rf1k49093.pdf pdf_icon

RF1K49092

RF1K49093 Data Sheet August 1999 File Number 3969.5 2.5A, 12V, 0.130 Ohm, Logic Level, Dual Features P-Channel LittleFET Power MOSFET 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits,

 7.1. Size:232K  fairchild semi
 rf1k49088.pdf pdf_icon

RF1K49092

RF1K49088 Data Sheet January 2002 3.5A, 30V, 0.06 Ohm, Logic Level, Dual Features N-Channel LittleFET Power MOSFET 3.5A, 30V This Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060 an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI integrated circuits, gives optimum ut

MOSTRAR MÁS

Otros transistores... PN4392, PN4393, PN4416, PN4416A, PSMN003-25W, RF1K49086, RF1K49088, RF1K49090, AON6380, RF1K49093, RF1K49154, RF1K49156, RF1K49157, RF1K49211, RF1K49221, RF1K49223, RF1K49224