RF1K49092 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RF1K49092
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5(2.5) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05(0.13) Ohm
Paquete / Cubierta: MS012AA

Búsqueda de reemplazo de MOSFET RF1K49092

RF1K49092 Datasheet (PDF)

..1. Size:247K intersil
rf1k49092.pdf

RF1K49092Data Sheet August 1999 File Number 3968.53.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic FeaturesLevel, Complementary LittleFET Power 3.5A, 12V (N-Channel)MOSFET2.5A, 12V (P-Channel)This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel)an advanced MegaFET process. This process, which usesrDS(ON) = 0.130 (P-Channel)feature sizes app

6.1. Size:248K fairchild semi
rf1k49090.pdf

RF1K49090Data Sheet January 20023.5A, 12V, 0.050 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 12VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum u

6.2. Size:141K intersil
rf1k49093.pdf

RF1K49093Data Sheet August 1999 File Number 3969.52.5A, 12V, 0.130 Ohm, Logic Level, Dual FeaturesP-Channel LittleFET Power MOSFET 2.5A, 12VThis Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,

7.1. Size:232K fairchild semi
rf1k49088.pdf

RF1K49088Data Sheet January 20023.5A, 30V, 0.06 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum ut

7.2. Size:142K intersil
rf1k49086.pdf

RF1K49086Data Sheet August 1999 File Number 3986.53.5A, 30V, 0.06 Ohm, Dual N-Channel FeaturesLittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum

Otros transistores... PN4392 , PN4393 , PN4416 , PN4416A , PSMN003-25W , RF1K49086 , RF1K49088 , RF1K49090 , IRF2807 , RF1K49093 , RF1K49154 , RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 , RF1K49223 , RF1K49224 .

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