All MOSFET. RF1K49092 Datasheet

 

RF1K49092 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF1K49092
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 3.5(2.5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05(0.13) Ohm
   Package: MS012AA

 RF1K49092 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1K49092 Datasheet (PDF)

 ..1. Size:247K  intersil
 rf1k49092.pdf

RF1K49092 RF1K49092

RF1K49092Data Sheet August 1999 File Number 3968.53.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic FeaturesLevel, Complementary LittleFET Power 3.5A, 12V (N-Channel)MOSFET2.5A, 12V (P-Channel)This complementary power MOSFET is manufactured using rDS(ON) = 0.050 (N-Channel)an advanced MegaFET process. This process, which usesrDS(ON) = 0.130 (P-Channel)feature sizes app

 6.1. Size:248K  fairchild semi
 rf1k49090.pdf

RF1K49092 RF1K49092

RF1K49090Data Sheet January 20023.5A, 12V, 0.050 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 12VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.050an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum u

 6.2. Size:141K  intersil
 rf1k49093.pdf

RF1K49092 RF1K49092

RF1K49093Data Sheet August 1999 File Number 3969.52.5A, 12V, 0.130 Ohm, Logic Level, Dual FeaturesP-Channel LittleFET Power MOSFET 2.5A, 12VThis Dual P-Channel power MOSFET is manufactured using rDS(ON) = 0.130an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,

 7.1. Size:232K  fairchild semi
 rf1k49088.pdf

RF1K49092 RF1K49092

RF1K49088Data Sheet January 20023.5A, 30V, 0.06 Ohm, Logic Level, Dual FeaturesN-Channel LittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits, gives optimum ut

 7.2. Size:142K  intersil
 rf1k49086.pdf

RF1K49092 RF1K49092

RF1K49086Data Sheet August 1999 File Number 3986.53.5A, 30V, 0.06 Ohm, Dual N-Channel FeaturesLittleFET Power MOSFET 3.5A, 30VThis Dual N-Channel power MOSFET is manufactured using rDS(ON) = 0.060an advanced MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI integrated circuits,gives optimum

Datasheet: PN4392 , PN4393 , PN4416 , PN4416A , PSMN003-25W , RF1K49086 , RF1K49088 , RF1K49090 , IRF2807 , RF1K49093 , RF1K49154 , RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 , RF1K49223 , RF1K49224 .

History: ZXMP3A16N8

 

 
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