APT10035LLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10035LLLG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 690 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 881 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO-264

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APT10035LLLG datasheet

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 apt10035b2llg apt10035lllg.pdf pdf_icon

APT10035LLLG

APT10035B2LL APT10035LLL 1000V 28A 0.350 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al

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 apt10035b2fllg apt10035lfllg.pdf pdf_icon

APT10035LLLG

APT10035B2FLL(G) APT10035LFLL(G) 1000V 28A 0.37 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching

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 apt10035jfll.pdf pdf_icon

APT10035LLLG

APT10035JFLL 1000V 25A 0.350W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

 6.2. Size:60K  apt
 apt10035jll.pdf pdf_icon

APT10035LLLG

APT10035JLL 1000V 25A 0.350 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

MOSTRAR MÁS

Otros transistores... APT1001RSVRG, APT10026L2FLLG, APT1002R4BNR, APT1002RBNR, APT10030L2VFRG, APT10035B2FLLG, APT10035B2LLG, APT10035LFLLG, 50N06, APT1003RBFLLG, APT1003RBLLG, APT1003RKFLLG, APT1003RKLLG, APT1003RSFLLG, APT1003RSLLG, APT10040B2VFRG, APT10040LVFRG