All MOSFET. APT10035LLLG Datasheet

 

APT10035LLLG Datasheet and Replacement


   Type Designator: APT10035LLLG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 690 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 881 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-264
      - MOSFET Cross-Reference Search

 

APT10035LLLG Datasheet (PDF)

 ..1. Size:90K  apt
apt10035b2llg apt10035lllg.pdf pdf_icon

APT10035LLLG

APT10035B2LLAPT10035LLL1000V 28A 0.350RB2LL POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesal

 5.1. Size:84K  apt
apt10035b2fllg apt10035lfllg.pdf pdf_icon

APT10035LLLG

APT10035B2FLL(G)APT10035LFLL(G)1000V 28A 0.37 RB2FLL POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching

 6.1. Size:71K  apt
apt10035jfll.pdf pdf_icon

APT10035LLLG

APT10035JFLL1000V 25A 0.350WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi

 6.2. Size:60K  apt
apt10035jll.pdf pdf_icon

APT10035LLLG

APT10035JLL1000V 25A 0.350 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

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History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE

Keywords - APT10035LLLG MOSFET datasheet

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