APT10M07JVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT10M07JVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 700 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 225 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 700 nC
   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 6800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: SOT-227

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APT10M07JVFR Datasheet (PDF)

..1. Size:117K apt
apt10m07jvfr.pdf

APT10M07JVFR100V 225A 0.007POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast R

4.1. Size:73K apt
apt10m07jvr.pdf

APT10M07JVR100V 225A 0.007POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

6.1. Size:73K apt
apt10m07.pdf

7.1. Size:38K apt
apt10m09b2vr.pdf

APT10M09B2VRAPT10M09LVR100V 100A 0.009WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

7.2. Size:146K apt
apt10m09lvfrg.pdf

APT10M09B2VFRAPT10M09LVFR100V 100A 0.009B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layou

7.3. Size:39K apt
apt10m09b2vfr.pdf

APT10M09B2VFRAPT10M09LVFR100V 100A 0.009WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

7.4. Size:255K inchange semiconductor
apt10m09lvfr.pdf

isc N-Channel MOSFET Transistor APT10M09LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.009(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

7.5. Size:376K inchange semiconductor
apt10m09b2vfr.pdf

isc N-Channel MOSFET Transistor APT10M09B2VFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.009(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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